Papers and Presentations

Dr. Mason J. Reed – Publications

    1. Mason J. Reed, “Experimental Determination of Potential Induced Degradation Acceleration Factors for Various Encapsulants, Test Conditions, and Installation Locations”, 2nd ATLAS/NIST Workshop on Photovoltaic Materials Durability, 2013
    2. Mason J. Reed, “Overcoming Excessive Nitride Formation via Aggressive Melting Profile”, Internal Presentation to GE Renewable Energy Management Team 2008
    3. Philip T. Barletta, E. Acar Berkman, Baxter F. Moody, and Nadia A. El-Masry,
      Ahmed M. Emara, Mason J. Reed, and S. M. Bedair, “Development of green, yellow and amber light emitting diodes using InGaN multiple quantum well structure.” Applied Physics Letter 90, 151109 (2007)
    4. P. T. Barlettaa, E. A. Berkmana, A. M. Emarab, M. J. Reeda, N. A. El-Masrya, and S. M. Bedair, “Development of Yellow and White LED’s Using InGaN-based Multi-Quantum Well Structures” [ECS-Cancun meeting 2007]
    5. M. J. Reed, F. E. Arkun, E. A. Berkman, N. A. Elmasry, J. Zavada, M. O. Luen, M. L. Reed, and S. M. Bedair, “Effect of doping on the magnetic properties of GaMnN: Fermi level engineering”, Appl. Phys. Lett. 86, 102504 (2005)
    6. M.L. Reed, M.J. Reed, M.O. Luen, E.A. Berkman, F.E. Arkun, S.M. Bedair, J.M. Zavada and N. A. El-Masry, “Magnetic properties of Mn-doped GaN and p-i-n junctions”, Phys. Stat. Sol. (c), 2, No. 7, 2403-2406 (2005)
    7. M. J. Reed, M. O. Luen, M. L. Reed, S. M. Bedair, F. E. Arkun, E.A. Berkman, N. A. Elmasry, and J. Zavada, “The Dependence of the Magnetic Properties of GaMnN on Codoping by Mg and Si”, Mater. Res. Soc. Symp. Proc. 834, J7.2 (2005)
    8. F.E. Arkun, M.J. Reed, E.A. Berkman, N.A. El-Masry, J.M. Zavada, M.O. Luen, M.L. Reed, and S.M. Bedair, “Evidence of Carrier Mediated Ferromagnetism in GaN:Mn/GaN:Mg Heterostructures”, Mater. Res. Soc. Symp. Proc. 831, E9.2, (2005)
    9. M.L. Reed, M.K. Ritums, M.J. Reed, S.M. Bedair, N.A. El-Masry, and J.M. Zavada, “Room temperature ferromagnetic properties of Mn-doped InxGa1-xN”, Journal of Electronic Materials, Accepted, 2004
    10. M.L. Reed, M.O. Luen, S.M. Bedair, M.J. Reed, F.E. Arkun, E.A. Berkman, N. A. El-Masry and J.M. Zavada,“Magnetic and Optical Properties of Mn-doped GaN thin Films and p-i-n Devices”, 24th Army Science Conference (2004)
    11. F. E. Arkun, M. J. Reed, E. A. Berkman, N. A. El-Masry, J. M. Zavada, M. L. Reed, and S. M. Bedair, “Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN:Mg interface”, Appl. Phys. Lett. 85, 3809 (2004)
    12. M.L Reed, E.A. Berkman, M.J. Reed, F.E. Arkun, T. Chikyow, S.M. Bedair, J.M. Zavada, and N.A. El-Masry “Magnetic properties of Mn-doped GaN, InGaN, and AlGaN”, Mat. Res. Soc. Symp. Proc. Vol. 798, Y.8.6.1 (2004)
    13. M. L. Reed, M. J. Reed, K. Jagannadham, K. Verghese, S. M. Bedair, N. El-Masry, and J. E. Butler, “Electrical characterization of 10B doped diamond irradiated with low thermal neutron fluence”, J. Vac. Sci. Technol. A 22, 1191 (2004)
    14. M.J. Reed, M.K. Behbehani, E.F. Arkun, M.L. Reed, J. Muth, A.E. Oberhofer,J.C. Roberts and S.M. Bedair, “Monolithic Integration of III-Nitride Optoelectronic Devices with Ruby”, 8th Wide Bandgap III-Nitride Workshop in Richmond, Virginia, 2003
    15. M. L. Reed, N. A. El-Masry, H. H. Stadelmaier, M. K. Ritums, M. J. Reed, C. A. Parker, J. C. Roberts, and S. M. Bedair, “Room temperature ferromagnetic properties of (Ga, Mn)N”, Appl. Phys. Lett. 79, 3473 (2001)
    16. M.L. Reed, M. K. Ritums, H. H. Stadelmaier, M. J. Reed, C. A. Parker, S. M. Bedair, and N. A. El-Masry, “Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices” Mat. Lett. 51 (6), p. 500 (2001)
    17. M. J. Reed, N. A. El-Masry, C. A. Parker, J. C. Roberts, and S. M. Bedair, “Critical layer thickness determination of GaN/InGaN/GaN double heterostructures”, Appl. Phys. Lett. 77, 4121 (2000)
    18. M. E. Hunter, M. J. Reed, N. A. El-Masry, J. C. Roberts, and S. M. Bedair, “Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation”, Appl. Phys. Lett. 76, 1935 (2000)
    19. C. A. Parker, J. C. Roberts, S. M. Bedair, M. J. Reed, S. X. Liu, and N. A. El-Masry, “Determination of the critical layer thickness in the InGaN/GaN heterostructures”, Appl. Phys. Lett. 75, 2776 (1999)
    20. C. A. Parker, J. C. Roberts, S. M. Bedair, M. J. Reed, S. X. Liu, N. A. El-Masry, and L. H. Robins, “Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN”, Appl. Phys. Lett. 75, 2566 (1999)